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Sunday, December 21, 2008

High and Low Side Mosfet Driver Circuit

The IR2110/IR2113 are high voltage, high speed power MOSFET and
IGBT drivers with independent high and low side referenced output channels.
Proprietary HVIC and latch immune CMOS technologies enable
ruggedized monolithic construction. Logic inputs are compatible with
standard CMOS or LSTTL output, down to 3.3V logic. The output
drivers feature a high pulse current buffer stage designed for minimum
driver cross-conduction. Propagation delays are matched to simplify use in
high frequency applications. The floating channel can be used to drive an
N-channel power MOSFET or IGBT in the high side configuration

whichoperates up to 500 or 600 volts

- Floating channel designed for bootstrap operation
Fully operational to +500V or +600V
Tolerant to negative transient voltage
dV/dt immune
- Gate drive supply range from 10 to 20V
- Undervoltage lockout for both channels
- 3.3V logic compatible
Separate logic supply range from 3.3V to 20V
Logic and power ground 5V offset
- CMOS Schmitt-triggered inputs with pull-down
- Cycle by cycle edge-triggered shutdown logic
- Matched propagation delay for

IR2110 Datasheet pdf

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