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Wednesday, December 24, 2008

HALF-BRIDGE MOSFET DRIVER CIRCUIT

IN = PWM 0 to 95%
IR2111
The IR2111(S) is a high voltage, high speed power
MOSFET and IGBT driver with dependent high and
low side referenced output channels designed for halfbridge
applications. Proprietary HVIC and latch
immune CMOS technologies enable ruggedized
monolithic construction. Logic input is compatible with
standard CMOS outputs. The output drivers feature a
high pulse current buffer stage designed for minimum
driver cross-conduction. Internal deadtime is provided
to avoid shoot-through in the output half-bridge. The
floating channel can be used to drive an N-channel
power MOSFET or IGBT in the high side configuration
which operates up to 600 volts.


Features
- Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
- Gate drive supply range from 10 to 20V
- Undervoltage lockout for both channels
- CMOS Schmitt-triggered inputs with pull-down
- Matched propagation delay for both channels
- Internally set deadtime
- High side output in phase with

IR2111 Datasheet pdf

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Sunday, December 21, 2008

High and Low Side Mosfet Driver Circuit

IR2110
The IR2110/IR2113 are high voltage, high speed power MOSFET and
IGBT drivers with independent high and low side referenced output channels.
Proprietary HVIC and latch immune CMOS technologies enable
ruggedized monolithic construction. Logic inputs are compatible with
standard CMOS or LSTTL output, down to 3.3V logic. The output
drivers feature a high pulse current buffer stage designed for minimum
driver cross-conduction. Propagation delays are matched to simplify use in
high frequency applications. The floating channel can be used to drive an
N-channel power MOSFET or IGBT in the high side configuration

whichoperates up to 500 or 600 volts

Features
- Floating channel designed for bootstrap operation
Fully operational to +500V or +600V
Tolerant to negative transient voltage
dV/dt immune
- Gate drive supply range from 10 to 20V
- Undervoltage lockout for both channels
- 3.3V logic compatible
Separate logic supply range from 3.3V to 20V
Logic and power ground 5V offset
- CMOS Schmitt-triggered inputs with pull-down
- Cycle by cycle edge-triggered shutdown logic
- Matched propagation delay for

IR2110 Datasheet pdf

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Sunday, November 23, 2008

Power MOSFET Drivers Circuit

1.5A Dual High-Speed Power MOSFET Drivers



The TC4426A/TC4427A/TC4428A are improved
versions of the earlier TC4426/TC4427/TC4428 family
of MOSFET drivers. In addition to matched rise and fall
times, the TC4426A/TC4427A/TC4428A devices have
matched leading and falling edge propagation delay
times.

Features:
- High Peak Output Current – 1.5A
- Wide Input Supply Voltage Operating Range: 4.5V to 18V
- High Capacitive Load Drive Capability – 1000 p in 25 ns (typ.)
- Short Delay Times – 30 ns (typ.)
- Matched Rise, Fall and Delay Times
- Low Supply Current:
- With Logic ‘1’ Input – 1 mA (typ.)
- With Logic ‘0’ Input – 100 μA (typ.)
- Low Output Impedance – 7Ω (typ.)
- Latch-Up Protected: Will Withstand 0.5A Reverse Current
- Input Will Withstand Negative Inputs Up to 5V
- ESD Protected – 4 kV
- Pin-compatible with TC426/TC427/TC428 and
TC4426/TC4427/TC4428
- Space-saving 8-Pin MSOP and 8-Pin 6x5 DFN Packages


TC4426 Datasheet pdf

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