Electronic Device And Electronic Circuit

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Wednesday, December 24, 2008


IN = PWM 0 to 95%
The IR2111(S) is a high voltage, high speed power
MOSFET and IGBT driver with dependent high and
low side referenced output channels designed for halfbridge
applications. Proprietary HVIC and latch
immune CMOS technologies enable ruggedized
monolithic construction. Logic input is compatible with
standard CMOS outputs. The output drivers feature a
high pulse current buffer stage designed for minimum
driver cross-conduction. Internal deadtime is provided
to avoid shoot-through in the output half-bridge. The
floating channel can be used to drive an N-channel
power MOSFET or IGBT in the high side configuration
which operates up to 600 volts.

- Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
- Gate drive supply range from 10 to 20V
- Undervoltage lockout for both channels
- CMOS Schmitt-triggered inputs with pull-down
- Matched propagation delay for both channels
- Internally set deadtime
- High side output in phase with

IR2111 Datasheet pdf

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